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| H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 Aug.05.2003 Features * Low on-resistance RDS(on) = 40 m typ. * Low drive current * 4.5 V gate drive device can driven from 5 V source Outline DPAK-2 D 4 DPAK-S 4 G 12 S 12 3 3 H7P0601DS H7P0601DL 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Aug.05.2003, page 1 of 10 H7P0601DL, H7P0601DS Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note3 Note2 Note1 Rating -60 20 -20 -80 -20 -12 12.3 25 150 -55 to +150 Unit V V A A A A mJ W C C EAR Pch Tch Tstg Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Rev.1.00, Aug.05.2003, page 2 of 10 H7P0601DL, H7P0601DS Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol Min V(BR)DSS -60 Typ -- -- -- -- -- 40 60 12 2200 220 130 37 6.5 8 25 85 70 15 0.95 30 Max -- -- 10 -10 -2.5 50 85 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns IF = -20 A, VGS = 0 IF = -20 A, VGS = 0 diF/dt = 100 A/s VGS = -10 V, ID = -10 A RL = 3.0 Rg = 4.7 VDD = -25 V VGS = -10 V ID = -20 A Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -60 V, VGS = 0 ID = -1 mA, VDS = -10 V ID = -10 A, VGS = -10 V Note1 ID = -5 A, VGS = -4.5 V Note1 ID = -10 A, VDS = -10 V Note1 VDS = -10 V VGS = 0 f = 1 MHz Gate to source breakdown voltage V(BR)GSS 20 Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF -- -- -1.0 -- -- 7.2 -- -- -- -- -- -- -- -- -- -- -- -- Body-drain diode reverse recovery trr time Note: 1. Pulse test Rev.1.00, Aug.05.2003, page 3 of 10 H7P0601DL, H7P0601DS Main Characteristics Power vs. Temperature Derating 50 Pch (W) -100 -30 Drain Current ID (A) Maximum Safe Operation Area 10 0 s s 40 30 10 -10 -3 -1 -0.3 is limited by RDS(on) -0.1 (T DC c= PW = Channel Dissipation 20 10 Operation in this area s (1 er sh at ot) 25 C ion ) Op 10 ms 1m -0.03 0 25 50 75 100 125 150 Ta = 25C -0.01 -3 -0.1 -0.3 -1 -10 -30 -100 Drain to Source Voltage VDS (V) Case Temperature Tc (C) -50 -40 -30 -20 -10 Typical Output Characteristics -10 V Pulse Test -8 V -6 V Drain Current ID (A) -50 -40 -30 -20 -10 Typical Transfer Characteristics V DS = -10 V Pulse Test Tc = -75C 75C 25C Drain Current ID (A) -5 V -4 V V GS = -2 V -3 V 0 -2 -4 -6 -8 -10 Drain to Source Voltage VDS (V) 0 -4 -6 -8 -2 Gate to Source Voltage VGS (V) Rev.1.00, Aug.05.2003, page 4 of 10 H7P0601DL, H7P0601DS Drain to Source Saturation Voltage VDS(on) (V) Pulse Test -0.8 -0.6 -0.4 -0.2 0 0 ID = -10 A -5 A -2 A -12 -4 -8 Gate to Source Voltage -16 VGS (V) -20 Drain to Source on State Resistance RDS(on) () -1 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 VGS = -4.5 V 0.2 0.1 0.05 -10 V 0.02 0.01 -1 -2 -5 -10 -20 -50 -100 Drain Current ID (A) Forward transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) () Static Drain to Source on State Resistance vs. Temperature 0.16 Pulse Test 0.12 -2 A, -5 A ID = -10 A 0.08 VGS = -4.5 V ID = -10 A VGS = -10 V 0 -50 0 50 Case Temperature -2 A, -5 A 100 Tc (C) 150 Forward Transfer Admittance vs. Drain Current 100 30 10 25C 3 75C 1 0.3 0.1 0.1 VDS = -10 V Pulse Test Tc = -25C 0.04 0.3 1 3 10 30 100 Drain Current ID (A) Rev.1.00, Aug.05.2003, page 5 of 10 H7P0601DL, H7P0601DS Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 300 100 Crss 30 10 0 -5 -10 -15 -20 -25 -30 (V) Drain to Source Voltage VDS VGS = 0 f = 1 MHz Ciss 300 100 30 10 3 diF/dt = 100 A/s VGS = 0, Ta = 25C Coss 1 -0.1 -0.3 -1 -3 -10 -30 -100 Reverse Drain Current IDR (A) Dynamic Input Characteristics VDS (V) 0 VDD = -10 V -25 V -50 V VGS (V) ID = -20 A 0 1000 Switching Characteristics tr -20 VDS -40 -4 Switching Time t (ns) VGS = -10 V, VDS = -30 V Pw = 5 s, duty < 1 % 300 Rg = 4.7 100 30 10 30 1 0.1 t d(off) Drain to Source Voltage Gate to Source Voltage -8 t d(on) tf -60 VDD = -50 V -25 V -10 V 16 32 48 -12 VGS -16 80 -80 0 64 0.3 Gate Charge Qg (nc) 1 3 Drain Current 10 ID 30 (A) 100 Rev.1.00, Aug.05.2003, page 6 of 10 H7P0601DL, H7P0601DS Maximum Avalanche Energy vs. Channel Temperature Drating Repetitive Avalanche Energy EAR (mJ) 20 IAP = -12 A VDD = -25 V duty < 0.1 % Rg > 50 -50 Reverse Drain Current IDR (A) -40 -30 -20 -10 Reverse Drain Current vs. Source to Drain Voltage 16 12 -10 V 8 4 0 25 -5 V 0 -0.4 -0.8 VGS = 0, 5 V Pulse Test -1.2 -1.6 VSD (V) -2.0 50 75 100 125 150 Source to Drain Voltage Channel Temperature Tch (C) Avalanche Test Circuit 1 2 Avalanche Waveform 2 V DS Monitor L I AP Monitor EAR = L * I AP * VDSS VDSS - V DD V (BR)DSS I AP VDD ID V DS Rg Vin -15 V D. U. T 50 0 VDD Rev.1.00, Aug.05.2003, page 7 of 10 H7P0601DL, H7P0601DS Normalized Transient Thermal Impedance vs. Pulse Width 1 Normalized Transient Thermal Impedance s (t) D=1 0.5 0.2 0.1 0.1 5 0.0 02 0. 0.01 o 1sh tp uls e ch - c(t) = s (t) * ch - c ch - c = 5C/W, Ta = 25C PDM PW T D= PW T 0.01 10 100 1m 10 m 100 m 1 10 100 1000 Pulse Width PW (S) Switching Time Test Circuit Vin Monitor Rg D.U.T. RL Vout Monitor Vin Switching Time Waveform 10% 90% Vin -10 V V DD = -30 V Vout td(on) 90% 10% tr td(off) 90% 10% tf Rev.1.00, Aug.05.2003, page 8 of 10 H7P0601DL, H7P0601DS Package Dimensions * H7P0601DL As of January, 2003 6.5 0.5 5.4 0.5 1.7 0.5 Unit: mm 2.3 0.2 0.55 0.1 4.7 0.5 16.2 0.5 3.1 0.5 1.15 0.1 0.8 0.1 (0.7) 5.5 0.5 1.2 0.3 0.55 0.1 2.29 0.5 2.29 0.5 0.55 0.1 Package Code JEDEC JEITA Mass (reference value) DPAK (L)-(2) -- -- 0.42 g Rev.1.00, Aug.05.2003, page 9 of 10 H7P0601DL, H7P0601DS * H7P0601DS As of January, 2003 1.5 0.5 Unit: mm 6.5 0.5 5.4 0.5 (0.1) (0.1) 2.3 0.2 0.55 0.1 (5.1) 5.5 0.5 1.2 Max 0 - 0.25 (1.2) 2.5 0.5 1.0 Max. 2.29 0.5 0.8 0.1 2.29 0.5 0.55 0.1 Package Code JEDEC JEITA Mass (reference value) (5.1) DPAK (S) -- Conforms 0.28 g Rev.1.00, Aug.05.2003, page 10 of 10 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 0.0 |
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